FDNS21: Epitaxial Growth of Transition Metal Dichalcogenides – Wafer-scale Single Crystal Monolayers

2021.01.20
Joan Redwing, Penn State University, University Park, PA

This talk is part of FDNS21: Future Directions in Nanomaterial Synthesis: From Rational Design to Data-Driven Manufacturing workshop sponsored by Nanomanufacturing (nanoMFG) Node at the University of Illinois at Urbana-Champaign. Presentations for this workshop can be found on nanoHUB at https://nanohub.org/resources/35001

Table of Contents:
00:00 Epitaxy in 2D: The path to wafer-scale single crystal monolayers and heterostructures
01:19 Layered materials….beyond graphene
01:42 2D TMDs – Intriguing Properties & Physics
02:14 Substrates for TMD epitaxy
04:11 Considerations for Vapor Phase Synthesis
05:36 Metalorganic Chemical Vapor Deposition
07:40 Wafer-scale thickness uniformity
09:27 MOCVD Process Modeling
11:04 Multi-scale Modeling of WSe2 Growth
11:48 Three step process for WSe2 MOCVD
13:28 Lateral Growth – Effect of Substrate Temperature
16:10 Lateral Growth of WSe2 Islands
17:21 Preferential alignment of WSe2 domains
18:54 Origin of step-induced alignment
20:37 Epitaxial WS2 monolayers on sapphire
22:24 Water-based transfer process for TMDs
22:57 Microstructure of WS2 monolayer
24:48 TEM analysis of line defects
26:07 Nearly single crystal WS2 monolayer
26:48 Wafer-scale epitaxial TMDs on sapphire
27:01 Photoluminescence of WS2 monolayers
28:36 Field-Effect Device Comparison
29:23 Benchmarking Wafer-Scale MoS2 and WS2 FETs
30:28 2D Crystal Consortium
31:52 Lifetime Sample Tracking (LiST) Database
33:32 Acknowledgements