Скачать или смотреть [Materials] Aberration Corrected STEM of GaN nanowire

A lamella of GaN nanowire was prepared with 1 kV Ar ion finishing using FIB-SEM-Ar triple beam system. Dislocations propagate across the nanowire in panoramic view. Atomic columns of AlN, Ti and Si were clearly observed in high magnification image.
#ElectronMicroscope #STEM #FIB #ArIon #GaN #nanowire #Dislocation

Available tools for this measurement are :
FIB-SEM-Ar Triple Beam system
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Aberration-corrected STEM
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