S10-E5_Compound Semiconductors webinar series_Part 5-GaN Technologies for high power and advanced RF

Описание к видео S10-E5_Compound Semiconductors webinar series_Part 5-GaN Technologies for high power and advanced RF

Gallium Nitride (GaN), known for its remarkable electronic properties like high electron mobility and a wide bandgap, is commonly used in applications that range from high-frequency RF devices to power electronics and energy-efficient Light Emitting Diodes (LEDs). The unique characteristics
of GaN make of this material an essential component in advancing modern technology.
In this webinar, Maritza Tangarife Ortiz (imec) will delve into GaN’s key physical principles and the fundamental workings of transistors in both power electronics and radio frequency applications. Moreover, we will explore the role of GaN in the development of LEDs and how this compound material enhances their performance. We will discuss the unique value that GaN brings to these technologies in contrast to other materials, highlighting the specific application ranges where GaN excels.
Finally, we will provide an overview of the broader industrial landscape surrounding GaN, including market forecasts and worldwide main players. We will present the GaN platforms of imec and UMS, available through EUROPRACTICE, highlighting successful demonstrators along the way.

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