Скачать или смотреть Specimen preparation for STEM EBIC failure analysis

Join Fischione Instruments and NanoElectronic Imaging to learn more about a significant advancement in specimen preparation for STEM EBIC failure analysis.

Electrical characterization and transmission electron microscopy (TEM) are crucial for semiconductor failure analysis. The scanning TEM electron beam-induced current (STEM-EBIC) imaging method integrates these techniques by performing electrical characterization at each STEM image pixel using the electron beam as a localized current source. The analyses produce both standard STEM images and electronic maps.

Successful STEM-EBIC imaging of devices requires careful specimen preparation because STEM-EBIC is highly sensitive to surface contamination and leakage paths. These factors are significantly influenced by artifacts introduced during focused ion beam (FIB) preparation, particularly when using conductive gallium (Ga) ions.

In this webinar, we discuss the use of STEM-EBIC to assess the surface quality of TEM specimens from advanced finFET devices and to characterize their electronic properties at high resolution. Post-FIB Ar ion milling using the Fischione Instruments' PicoMill® TEM specimen preparation system significantly enhances specimen quality by effectively removing Ga ion implantation and amorphous damage induced by FIB milling. NanoElectronic Imaging's Two-Channel STEM EBIC System for STEM-EBIC analysis reveals a clear differentiation between inactive and active finFET structures, highlighting the substantial improvements in sample quality achieved through post-FIB Ar ion milling.