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Скачать или смотреть SESAMs for Femtosecond and Picosecond Oscillators: Ti:Sapphire, Yb, Er, Cr:ZnSe/ZnS, VECSELs

  • delmarphotonics
  • 2025-11-25
  • 6
SESAMs for Femtosecond and Picosecond Oscillators: Ti:Sapphire, Yb, Er, Cr:ZnSe/ZnS, VECSELs
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Описание к видео SESAMs for Femtosecond and Picosecond Oscillators: Ti:Sapphire, Yb, Er, Cr:ZnSe/ZnS, VECSELs

SESAMs for Femtosecond and Picosecond Oscillators: Ti:Sapphire, Yb, Er, Cr:ZnSe/ZnS, VECSELs

shown in the video SAM (SESAM) chip mounted in the center of diam 12.7mm heat think

Del Mar offering SESAMs for Femtosecond and Picosecond Oscillators: Ti:Sapphire, Yb, Er, Cr:ZnSe/ZnS, VECSELs
Contact us for technical guidance or a quote: [email protected]
http://www.dmphotonics.com
SAM brochure
http://www.dmphotonics.com/SAM_web.pdf

SESAMs (Semiconductor Saturable Absorber Mirrors) are essential components for modern ultrafast lasers, enabling passive, self-starting mode-locking in femtosecond and picosecond oscillators. They are used with Ti:Sapphire, Yb-doped crystals and fibers, Er-doped systems, Cr:ZnSe/ZnS gain media, semiconductor lasers, and VECSELs. By providing fast intensity-dependent reflectivity, SESAMs allow precise control over pulse formation, duration, and repetition rate.

Unmounted SESAM chips, supplied as bare semiconductor devices without housing, give designers maximum flexibility. They can be directly mounted on heat-spreading substrates such as diamond, sapphire, or copper, enabling high-average-power operation and minimal thermal distortion. This format also allows custom mounting, precise alignment, integration into vacuum or cryogenic setups, and incorporation into non-standard cavity geometries.

The core structure combines a semiconductor Bragg mirror with a saturable absorber layer. Key parameters include modulation depth, non-saturable loss, saturation fluence, recovery time, and damage threshold. Modulation depth impacts self-starting and pulse stability, while recovery time, ranging from hundreds of femtoseconds to picoseconds, determines suitability for femtosecond or picosecond pulse generation. Optional coatings provide anti-reflection surfaces, dispersion control, and durability under high fluence.

These chips are versatile across a wide wavelength range and gain media. Ti:Sapphire oscillators achieve sub-50-fs pulses; Yb-based systems enable high-power, low-noise operation; Er-doped lasers cover 1.5 µm for telecommunications and frequency combs; Cr:ZnSe/ZnS systems extend to 2–3 µm; and VECSELs or semiconductor gain structures benefit from compact, high-repetition-rate designs.

Thermal management is crucial. Unmounted SESAMs allow direct bonding to high-conductivity substrates, reducing thermal lensing and maintaining reflectivity at high powers. Anti-reflection and protective coatings further enhance stability and lifetime. Designers can also tailor dispersion properties for intracavity pulse shaping, making SESAMs not only mode-locking elements but also tools for precise pulse control.

Applications include ultrafast spectroscopy, micromachining, microscopy, metrology, frequency combs, and nonlinear optics. Unmounted SESAMs provide unparalleled flexibility, enabling optimized performance in research and industrial ultrafast laser systems. With broad wavelength coverage and customizable properties, they remain indispensable for next-generation photonics.

SAM brochure
http://www.dmphotonics.com/SAM_web.pdf


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