Are Nexperia Power MOSFETs ESD Protected?

The main ESD failure mechanism of MOSFETs is through the breakdown of the gate oxide where the gate-source oxide is the most sensitive area. Larger MOSFETs, such as Power MOSFETs, have higher Ciss parameters and good gate oxide quality, therefore making them less sensitive to ESD events. Nexperia uses special testing techniques to screen MOSFETs in production against devices with weak gate oxides by measuring the gate-source leakage current behaviour.

Join Stein as he explains how adding extra ESD protections can actually hinder the screening process, making it difficult to identify MOSFETs with weak gate oxides and resulting in higher failure rates in the field.

Learn more on this topic within the MOSFET and GaN FET application handbook: https://efficiencywins.nexperia.com/e...