Скачать или смотреть Event-driven voltage references with bandgap-class temperature coefficient, ultra-low power (100 pW)

A novel class of voltage references with event-driven temperature compensation is proposed to reduce power under common-case moderate fluctuations. An accurate reference is occasionally turned on to fine-tune a low-power clone when temperature changes by more than a threshold. As opposed to sample&hold references whose period is limited by capacitor discharge due to leakage, the proposed reference has unrestrictedly long off-periods and reduce power below 100 pW. At the same time, bandgap-class temperature coefficient and 0.31% process sensitivity across corners are achieved in 180nm.

Compared to prior art, the proposed reference achieves a typical (across-corner) minimum power that is lower by 3.4X (2.7X) while improving the temperature coefficient by 2.3X. Process sensitivity including corner wafers is in line with prior art not reporting corners, and hence superior. Process sensitivity is also 1.4-4.6X better when fairly comparing with mismatch-only. Process sensitivity is also 1.7X better than references including corner wafers.

The authors thank the support of the Singapore Ministry of Education (T2EP50123-0037 grant), TSMC for fabrication.

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