Titled: SKYRMIONS INSPIN-ORBITRONICS ANDORBITRONICS–NOVEL SCIENCE AND APPLICATIONS IN MEMORY & NON-CONVENTIONAL COMPUTING
Abstract: Novel spintronic devices can play a role in the quest for GreenIT if they are stable and can transport and manipulate spin with low power. Devices have been proposed, where switching by energy-efficient approachesis used to manipulate topological spin structures [1,2]. Firstly, to obtain ultimate stability of states, topological spin structures that emerge due to the Dzyaloshinskii-Moriya interaction (DMI) at structurally asymmetric interfaces, such as chiral domain walls and skyrmions with enhanced topological protection can be used [3-5]. Here we will introduce these spin structures ad we have investigated in detail their dynamics and find that it is governed by the topology of the spin structure [3]. By designing the materials, we can even obtain a skyrmion latticephase as the ground state [4]. Beyond 2D structures, we recently developed systems with chiral interlayer exchange interactions that lend themselves to the formation of chiral 3D structures [6].Secondly, for ultimately efficient spin manipulation, we use spin-orbit torques, that can transfer more than 1ħ per electron by transferring not only spin but also orbital angular momentum. We combine ultimately stable skyrmions with spin orbit torques into a skyrmion racetrack memory device [4], where the real time imaging of the trajectories allows us to quantify the skyrmion Hall effect [5]. Recently, we determined the possible mechanisms that lead to a dependence of the skyrmion Hall effect on skyrmion velocity [7]. We furthermore use spin-orbit torque induced skyrmion dynamics for non-conventional stochastic computing applications, where we developed skyrmion reshuffler devices[8] based on skyrmion diffusion, which also reveals the origin of skyrmion pinning [8]. Such diffusion can furthermore be used for Token-based Brownian Computing and Reservoir Computing [9].Beyond dynamics excited by spin-orbit torques the next step is to use orbital currents that generate orbital torques [10]. We have demonstrated thatwithan additional Cu/CuOx layer, the acting torques can be increased by more than a factor 10 [10]. This effect has been interpreted as resulting from an orbital Hall current that is converted to a spin current. Finally, an interfacial Orbital Rashba Edelstein Effect has been found, highlighting that the orbital analogues of both the spin Hall effect and the spin-based Rashba Edelstein or Inverse Spin Galvanic effect exist [11].
References:
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[6]D. Han et al., Nature Mater., vol. 18, no. 7, pp. 703–708(2019).
[7K. Litzius et al., Nature Electron., vol. 3, no. 1, pp. 30–36(2020).
[8]J. Zázvorka et al., Nature Nanotechnol., vol. 14, no. 7, pp. 658–661(2019).R. Gruber et al., arxiv:2201.01618 (Nature Commun. in press (2022)).
[9]K. Raab et al., arxiv:2203.14720.M. Brems et al., Appl. Phys. Lett. 119, 132405(2021).
[10]S. Ding et al., Phys. Rev. Lett. 125, 177201(2020); Phys. Rev. Lett. 128, 067201(2022).
[11]D. Go et al., EPL 135, 037002 (2021)
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