Скачать или смотреть V-I characteristics of pn junction diode

In V-I characteristics of pn junction diode is two operating regions and three possible “biasing” conditions for the standard Junction Diode and these are:
1. Zero Bias – No external voltage potential is applied to the PN junction diode.
2. Reverse Bias – The voltage potential is connected negative, (-ve) to the P-type material and positive, (+ve) to the N-type material across the diode which has the effect of Increasing the PN junction diode’s width.
3. Forward Bias – The voltage potential is connected positive, (+ve) to the P-type material and negative, (-ve) to the N-type material across the diode which has the effect of Decreasing the PN junction diodes width.

Forward Biasing Characteristic of Diode
When, P terminal is more positive as compared to N terminal i.e. P- terminal connected to positive terminal of battery and N-terminal connected to negative terminal of battery, it is said to be forward biased. forward biasing diode Positive terminal of the battery repels majority carriers, holes, in P-region and negative terminal repels electrons in the N-region and push them towards the junction. This result in increase in concentration of charge carriers near junction, recombination takes place and width of depletion region decreases. As forward bias voltage is raised depletion region continues to reduce in width, and more and more carriers recombine. This results in exponential rise of current.

In reverse biasing Characteristic of Diode
P- terminal is connected to negative terminal of the battery and N- terminal to positive terminal of battery. Thus applied voltage makes N-side more positive than P-side. reverse biasing diode Negative terminal of the battery attracts majority carriers, holes, in P-region and positive terminal attracts electrons in the N-region and pull them away from the junction. This result in decrease in concentration of charge carriers near junction and width of depletion region increases. A small amount of current flow due to minority carriers, called as reverse bias current or leakage current. As reverse bias voltage is raised depletion region continues to increase in width and no current flows. It can be concluded that diode acts only when forward biased.

Avalanche Breakdown(for V upper then 5V)
Under very high reverse bias voltage kinetic energy of minority carriers become so large that they knock out electrons from covalent bonds, which in turn knock more electrons and this cycle continues until and unless junction breakdowns.

Zener Effect (for V lower then5V)
Under reverse bias voltage junction barrier tends to increase with increase in bias voltage. This results in very high static electric field at the junction. This static electric field breaks covalent bond and set minority carriers free which contributes to reverse current. Current increases abruptly and junction breaks down.

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