PN Junction Avalanche Breakdown | தமிழில் | Physics | Simple Let's Crack it |

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Avalanche breakdown is a phenomenon that can occur in a PN junction diode under reverse bias conditions. It is characterized by a sudden and rapid increase in current as the reverse voltage applied to the diode exceeds a certain threshold. Here are some key points about PN junction avalanche breakdown:

Reverse Bias: Avalanche breakdown occurs when a reverse bias voltage is applied to the PN junction diode. In this configuration, the P-side is connected to the negative terminal, and the N-side is connected to the positive terminal.

Electric Field: Under reverse bias, an electric field is created across the depletion region of the diode. This electric field exerts a force on the charge carriers (electrons and holes) within the diode.

Avalanche Effect: As the reverse bias voltage is increased, the electric field in the depletion region becomes stronger. This strong electric field can impart enough energy to electrons in the crystal lattice, causing them to gain sufficient kinetic energy to knock other electrons out of their atomic positions. This process is known as impact ionization.

Carrier Multiplication: Impact ionization leads to the creation of electron-hole pairs, and these newly generated carriers can, in turn, gain energy and create more carriers through impact ionization. This cumulative process results in an exponential increase in the number of charge carriers, which leads to a rapid increase in current.

Breakdown Voltage: The voltage at which avalanche breakdown occurs is known as the breakdown voltage or the Zener voltage. It is specific to each diode and depends on its material, doping levels, and physical characteristics.

Use in Zener Diodes: Zener diodes are designed to operate in the breakdown region. They are specially manufactured to have well-defined breakdown voltages and are used for voltage regulation in electronic circuits.


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Applications: Avalanche breakdown is utilized in various applications, including voltage reference standards, voltage clamping, and transient voltage suppression devices.

In summary, avalanche breakdown in a PN junction diode is a critical phenomenon that can be exploited in certain electronic components, such as Zener diodes, for precise voltage regulation and protection against voltage spikes. It is characterized by the rapid multiplication of charge carriers due to impact ionization under reverse bias conditions.