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GaAs, GaN, and InP Epitaxy for Advanced Photonic Integration
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The product lineup centers on advanced semiconductor materials and engineered wafers that serve as the foundation for modern electronics, photonics and high-performance devices. These offerings are designed for both research & development and high-volume manufacturing, addressing the needs of connectivity, sensing, optical communication, displays, power electronics and beyond.

At the core of the portfolio are epiwafers — precision-engineered substrates with atomic-level compound semiconductor layers deposited using leading growth technologies such as MOCVD and MBE. These epiwafers are available across multiple materials platforms, enabling a wide spectrum of applications from RF connectivity to power electronics. Wafer sizes span from smaller research-scale diameters up to 300 mm for large-scale production.

Gallium Arsenide (GaAs) epitaxial wafers play a versatile role in high-frequency and optoelectronic applications. Their portfolio includes high electron mobility structures used in RF front-ends, MESFETs, HBTs, PIN and Schottky diodes, as well as VCSELs and quantum-well photodetectors that support optical communications and 3D sensing technologies. GaAs materials are also key in advanced display solutions including red lasers and µLED devices.

Gallium Nitride (GaN) epitaxial products harness the wide bandgap advantage for demanding RF and power markets. This includes GaN HEMTs on SiC and Si platforms, high-voltage devices for power electronics, and GaN on sapphire for high-power applications. GaN also supports emerging display tech with blue, green and red GaN-on-Si microLED offerings.

Indium Phosphide (InP) epitaxy addresses the needs of high-speed optical communication and sensing. The portfolio ranges from Fabry-Perot, DFB and electro-absorption lasers to photodetectors across SWIR and extended wavelengths, as well as HEMTs and HBTs for mmWave and terahertz systems. These wafers underpin global fiber-optic networks, AI-driven datacom infrastructure, and secure communications.

Beyond III–V materials, photonics epitaxial wafers span devices central to 3D sensing, infrared imaging and telecom/datacom applications. These include VCSELs at key wavelengths for proximity sensing and illumination, quantum cascade lasers (QCL) for mid-IR applications, and a variety of detectors optimized for military, environmental sensing and industrial monitoring.

A comprehensive lineup of substrates forms the base for all epitaxial growth. Available materials include GaAs, GaSb, InP, InSb and InAs, each offered in multiple diameters, orientations and finishes, with precise epi-ready surfaces and full traceability. These substrates support device fabrication across wireless, photonic, infrared and advanced sensing markets.

Additionally, source materials are supplied for epitaxial growth processes like Liquid Phase Epitaxy (LPE) and Molecular Beam Epitaxy (MBE). This includes high-purity polycrystalline ingots, wafers and elemental sources such as gallium, aluminium and indium, ensuring reliable feedstock for diverse manufacturing workflows.
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Across the product suite, customization and collaboration are highlighted — allowing materials and wafer characteristics to be tailored to specific fab processes, performance targets and emerging technology requirements.

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