Minimizing Drain Induced Barrier Lowering (DIBL) by Reducing Oxide Thickness, Lecture 74

Описание к видео Minimizing Drain Induced Barrier Lowering (DIBL) by Reducing Oxide Thickness, Lecture 74

Minimizing DIBL by reducing oxide thickness (or increasing oxide capacitance). I will also describe the use of hafnium oxide (hafnia) to achieve small tunneling-free equivalent oxide thickness (EOT).

Here is the link for my entire course on "Semiconductor Devices for VLSI" that I taught on-line during Fall 2020    • A Course on Semiconductor Physics and...  

This is Lecture 74 of 77.

Textbook references are to the free e-book "Modern Semiconductor Devices for Integrated Circuits" by Chenming Calvin Hu.
https://www.chu.berkeley.edu/modern-s...

#DIBL
#DrainInducedBarrierLowering
#HafniumOxide
#Hafnia

#TunnelingLeakageCurrent

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