Reactive Ion Etching (RIE) - A Lecture by Dr. Fouad Karouta

In this informative lecture, Dr. Fouad Karouta provides an in-depth discussion of relative ion etching (RIE) and its applications in semiconductor device fabrication. He covers the basics of the etching process and explores the unique properties of RIE that make it a powerful tool. Dr. Karouta also discusses the criteria for RIE and the choice of chemistry given the etching rate, in addition to general rules and effects. He then explains a simple thermodynamics approach in RIE of GaN. Then he talks about the deep itching of InP-based structures for different photonic applications.

Dr. Fouad Karouta is the facility manager of the ANFF ACT node. He has acquired his Ph.D. degree from Montpellier University (France) in epitaxy and LEDs of InGaAsSb structures. He was an associate professor at the Opto-electronic Devices Section of the Department of Electrical Engineering, Eindhoven University of Technology (The Netherlands). He joined the ANU in 2009, has vast experience in managing research facilities, and has been involved with research in III-V compound semiconductors (GaAs, InP, GaN) for optoelectronic and microelectronic applications for more than 20 years.