III-V integration on Si Photonics platform | CEA-Leti

III-V integration on Si Photonics Patform

CEA-Leti’s versatile photonics platform allows collective die-to-wafer bonding of III-V epi layers on Silicon for large scale integrated lightsources. This integration enables to go further into the miniaturization, power efficiency, cost reduction and scalability of photonic integrated circuits (PIC).

This collective die-to-wafer bonding of III-V on Si is performed in a CMOS compatible integration process. III-V dies are placed collectively on the Si wafer according to the circuit layout. One or several different III-V epi layers can be integrated on the same wafer. This enables III-V epi layers to be optimized for each laser and modulator.

CEA-Leti’s versatile Si photonics platform therefore offers the integration of amorphous Si, SiGe, Ge and SiN layers, and III-V-bonded epi layers on the same wafer, providing the advantages of each material.

Pioneering silicon photonics for more than 15 years, CEA-LETI has designed a technology toolbox featuring state-of-the-art performance for communication, computing and optical sensing. This convergence of various photonic platforms combined inside CEA-Leti’s platform helps addressing numerous applications from visible to mid-infrared with the same technology.

Applications :
- Communication : Telecom, Datacom, 5G infrastructures, quantum cryptography for cybersecurity
- Computing : Computer communication for High Performance Computing (HPC), quantum computing and neuromorphic computing for AI
- Sensing : optical gas sensing, structural health monitoring and 3D sensing such as LIDAR

Key Features :
- 300 mm SOI substrate with 310 nm Si, other thicknesses available
- Multilevel silicon patterning for silicon heights of 0, 65, 165 and 310 nm
- Selective Ge epitaxy
- SiN layer (optional)
- TiTiN heater
- 6 implant levels for p-type and n-type for electro-optic modulators and silicon doped heaters
- Silicide tungsten contact
- III-V collective die bonding

Key achievements:
- Mature device library for O-band and C-band in a Process Design Kit (PDK), compatible with conventional CAD tools.
- III-V integration on CMOS-compatible process through collective die bonding
- Multilayer Si/Si or SiN/Si for 3D photonics
- 2D beam steering based on SiN OPA
- Tunable DBR, DFB, racetrack lasers
- Transceivers with monolithically integrated lasers

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