Скачать или смотреть Gallium Nitride (GaN): Are you GaNFast?

Gallium nitride (GaN): real-time demonstration showing how GaN power ICs charge 3x-5x faster charging than legacy silicon chips. Presented by Stephen Oliver, VP Corporate Marketing & Investor Relations

Video version of SEC 8-K and 425 filings, available via www.navitassemi.com/ir

Gallium nitride (GaN) is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon chips. Navitas’ proprietary GaN power ICs integrate GaN power (FET) and GaN drive plus control and protection in a single SMT package. These GaNFast power ICs become easy-to-use, high-speed, high-performance ‘digital-in, power-out’ building blocks and deliver up to 3x faster charging in half the size and weight, and with up to 40% energy savings compared with legacy silicon chips.

Navitas predicts GaN power ICs can address markets estimated to grow to over $13B in 2026. Navitas estimates that GaN can impact up to 2.6 Gtons of CO2 reduction annually by 2050. Navitas has already shipped over 20M GaNFast power ICs to tier-1 companies including Dell, Lenovo, Xiaomi, LG, OPPO and more, with over 135 customer designs in mass production and over 150 more in development.

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