Скачать или смотреть Ultrasensitive Strain Sensor Enhanced by Bonded Light Emitting Diodes

Sponsored by IEEE Sensors Council (https://ieee-sensors.org/)

Title: Ultrasensitive Strain Sensor Enhanced by Bonded Light Emitting Diodes

Author: Thanh Nguyen{1}, Toan Dinh{2}, Van Thanh Dau{1}, Abu Riduan Md Foisal{1}, Hung Nguyen{1}, Trung Hieu Vu{1}, Tuan Anh Pham{1}, Canh-Dung Tran{2}, Tuan-Khoa Nguyen{1}, Hoang-Phuong Phan{1}, Nam-Trung Nguyen{1}, Dzung Viet Dao{1}

Affiliation: {1}Griffith University, Australia; {2}University of Southern Queensland, Australia

Abstract: Herein we report a strain sensor with SiC/Si heterostructure with performance enhanced toward ultra-sensitivity using a bonded pico-light-emitting-diode. First, a cantilever with SiC/Si heterostructure is fabricated, which followed by bonding a pico-LED on the top of the cantilever. The lateral photovoltage and photocurrent, then, are investigated under different LED supply voltage. The lateral photovoltage and photocurrent are as high as 7.9 mV and 19.06 µA, respectively, as the bonded LED is powered by a supply voltage of 6V. Finally, the performance of the strain sensor was investigated. When the bonded LED is OFF, the gauge factor (GF) of the strain sensor is 20,5. This GF significantly increases to 18,000 when the bonded LED is ON, which is thousand-time modulation. In other word, the strain sensor with bonded LED has ultra-high sensitivity.

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