An Ultrafast Active Quenching Circuit for SPAD in CMOS 28nm FDSOI Technology

Sponsored by IEEE Sensors Council (https://ieee-sensors.org/)

Title: An Ultrafast Active Quenching Circuit for SPAD in CMOS 28nm FDSOI Technology

Author: Mohammadreza Dolatpoor Lakeh{2}, Jean-Baptiste Kammerer{2}, Wilfried Uhring{2}, Jean-Baptiste Schell{2}, Francis Calmon{1}

Affiliation: {1}Université de Lyon, Institut des Nanotechnologies de Lyon, UMR CNRS 5270, France; {2}University of Strasbourg, ICube Laboratory, France

Abstract: A very fast Active Quenching-Active Reset Circuit is proposed for the afterpulsing reduction in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed in a 28 nm CMOS FDSOI (Fully Depleted Silicon On Insulator) technology which takes benefit from the Body Biasing. By means of a very fast detection circuit, the avalanche is detected in just 27 ps. The fast detection results in a quenching time of less than 210 ps with a 46% reduction of the charge involved in the avalanche process. This reduction in the avalanche charge should strongly reduce the afterpulsing effect.

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