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PN Junction Diode characteristics In Telugu | EDC Lab Experiments
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Circut & Manual Link :
https://docs.google.com/document/d/1z...


A PN junction diode is a semiconductor device formed by joining together a P-type (positive) and an N-type (negative) semiconductor material. Here are some of its key characteristics:

Forward Bias:
When a positive voltage is applied to the P-side and a negative voltage is applied to the N-side (anode connected to the P-side and cathode to the N-side), the diode is said to be forward-biased. In this mode, the diode conducts current easily, allowing the flow of electric current.

Reverse Bias:
When a negative voltage is applied to the P-side and a positive voltage is applied to the N-side (anode connected to the N-side and cathode to the P-side), the diode is reverse-biased. In this mode, the diode blocks current flow. However, a small reverse current called the leakage current may flow, due to minority carriers.

Threshold Voltage:
The minimum voltage required to make the diode conduct significantly in the forward direction is called the threshold voltage (typically around 0.6-0.7 volts for silicon diodes).

Reverse Breakdown:
When the reverse voltage exceeds a certain threshold (breakdown voltage), the diode may experience a rapid increase in reverse current. This phenomenon is known as reverse breakdown, and it can be either avalanche breakdown or Zener breakdown.