Making High Volume Production of 3D NAND Devices a Reality

3D NAND is advance technology that enables high density memory devices. This video will explain the process of how these structures are made using various deposition and etch techniques. Explore career opportunities at Lam Research: https://bit.ly/48cqg0g

Lam Research website: https://www.lamresearch.com/
LinkedIn:   / lam-research  
Facebook:   / lamresearchcorporation  
X:   / lamresearch  
Instagram:   / lam.research  

To address the demand for storage capacity; 3D NAND structures build vertical strings of memory cells. Lam's dep and etch systems are making high-volume production of 3D NAND devices a reality. The process starts by stacking alternating layers of materials such as oxide and nitride films. Openings are formed followed by high aspect ratio etch which will define the size and shape of the memory channel holes. After a hard mask layer is deposited, slits are then etched to separate the columns of channel holes creating an array of memory cells. By stacking cells vertically 3D NAND offers higher bit density for increased memory demand.