MOSFET IV Characteristics - Derivation of MOSFET Current equation

In this video, we have discussed V-I Characteristics of MOSFETs. We have derived an equation of Drain Current (Id) in terms of Gate to Source voltage (Vgs) and Drain to Source voltage (Vds). Then, we plot the characteristics of Id Vs Vgs and Id vs Vds. The current equation is Id=Un.Cox. (W/L).[(Vgs-Vth)^2-0.5(Vds^2)], where Vth is the threshold voltage of mosfet, Un is the mobility of electronics, Cox is the oxide capacitance per unit area and W/L is the ratio of width and length of the mosfet. This video also talks about how for low values of Vds, the graph is linear showing, a mosfet as a resistor.

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