Скачать или смотреть New HBM3E GPU Memory! - Increased Capacity & Speed!

The AI boom is in full swing, and chip manufacturers are bringing new, advanced memory technologies to the table. Next-generation High Bandwidth Memory (HBM) is poised to deliver significant increases in both bandwidth and capacity, and Samsung is aiming aiming to lead the industry.

Despite entering the HBM3E market somewhat belatedly, Samsung is introducing its HBM3E 12H DRAM chips as a pioneering achievement in 3D layered memory technology. The latest memory chips from the Korean giant utilize a novel 12-layer stack, which can deliver a 50 percent increase in both performance and capacity compared to HBM3E chips with an 8-layer stack.

The HBM3E 12H chips can achieve up to 1,280 gigabytes per second (GB/s) of bandwidth, Samsung claims, providing an unprecedented capacity of 36 gigabytes. Samsung managed to stack 12 layers in the same chip by utilizing advanced thermal compression non-conductive film (TC NCF), which appears to maintain the same height specification as 8-layer chips, meeting current requirements for HBM memory packaging applications.

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