ROHM's 4th Generation SiC MOSFETs Tech Explainer

Описание к видео ROHM's 4th Generation SiC MOSFETs Tech Explainer

ROHM’s new 4th generation of MOSFETs utilize an improved trench structure to deliver the industry’s lowest ON resistance, while low switching loss is achieved by significantly reducing parasitic capacitance. The package lineup has also been expanded to include a Kelvin source pin that minimizes the effects of the inductance component.

For more information, click here: https://www.futureelectronics.com/sea...

About Future Electronics: https://www.futureelectronics.com
Follow us on LinkedIn:   / future-electronics  
Follow us on Twitter:   / futureelec  

Комментарии

Информация по комментариям в разработке

Похожие видео