VLSI - Lecture 3e: MOSFET Modeling - Leakages in NanoScaled Transistors

Bar-Ilan University 83-313: Digital Integrated Circuits
This is Lecture 3 of the Digital Integrated Circuits (VLSI) course at Bar-Ilan University. In this course, I cover VLSI circuit design, starting with the technology and through the design of complex digital circuits, such as multipliers and memory blocks.

Lecture 3 teaches about the MOSFET Models and how standard effects are taken into account during simulation.
In the fifth and final section, I introduce leakage currents in MOS transistors and discuss the main design parameters that affect these leakages.

Lecture slides can be found on the EnICS Labs web site at:
https://enicslabs.com/academic-course...

All rights reserved:
Prof. Adam Teman
Emerging nanoscaled Integrated Circuits and Systems (EnICS) Labs
Faculty of Engineering, Bar-Ilan University