[SGeC] IRF9Z24N P-Channel MOSFET 55V-12A-45W

Описание к видео [SGeC] IRF9Z24N P-Channel MOSFET 55V-12A-45W

Type Designator: IRF9Z24N
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 45 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 19(max) nC
Rise Time (tr): 55 nS
Drain-Source Capacitance (Cd): 170 pF
Maximum Drain-Source On-State Resistance (Rds): 0.175 Ohm
Package: TO220AB

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