Скачать или смотреть How TSMC Plans to Save Moore's Law: The CFET Revolution

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For decades, the semiconductor industry has followed a simple rule: shrink the transistor to make the chip faster. But we are hitting a physical wall. As we approach the atomic limit with 3nm and 2nm processes, we are simply running out of horizontal space on the silicon wafer. If we can't build smaller, we have to build taller.

In this video, we explore the Complementary Field Effect Transistor (CFET), the radical new architecture that industry giants like TSMC and Intel are betting on to propel us into the Angstrom era of computing.

The Problem: Running Out of Real Estate To understand CFET, we first look at where we are today. Current cutting-edge chips use GAA (Gate-All-Around) nanosheet technology. While efficient, these transistors still rely on placing components side-by-side. Specifically, every logic gate needs an N-Type transistor (which carries electrons) and a P-Type transistor (which carries holes) sitting next to each other. This takes up valuable "floor space" on the chip.

The Solution: The "Skyscraper" Chip The CFET changes the game by turning this 2D layout into a 3D structure. Instead of placing N-type and P-type transistors side-by-side, CFET stacks them vertically on top of one another. Think of it like urban planning: when a city runs out of land, it stops building single-story houses and starts building skyscrapers. CFET is the skyscraper of the chip world. By stacking these components, chipmakers can effectively double the transistor density without increasing the chip's footprint. This allows for more logic gates, more cache, and significantly more processing power in the same amount of space.

The Engineering Nightmare However, building a skyscraper at the atomic scale is incredibly difficult. We discuss the massive manufacturing hurdles that stands in the way of mass production:

Atomic Precision: Aligning the top and bottom transistors requires accuracy measured in angstroms. A misalignment of even a few atoms could ruin the entire chip.

Heat Dissipation: When you stack heat-generating components on top of each other, cooling becomes a nightmare. Engineers are having to invent entirely new materials and cooling solutions to prevent these chips from melting from the inside out.

Complex Fabrication: The manufacturing steps required to build these vertical structures are exponentially more complex and expensive than current methods.

The Future: The Angstrom Era Despite the risks, the industry views CFET as the only viable path forward. Successful implementation in the late 2020s could redefine what our devices are capable of, powering the next generation of AI, supercomputers, and mobile devices.

Join us as we zoom in to the nanometer scale to see how the chips of tomorrow are being built today.

Timestamps: 0:00 Is Moore's Law Dead? 1:45 From FinFET to GAA Nanosheets 4:20 Enter CFET: The Vertical Revolution 6:50 How Stacking N & P Transistors Works 9:15 The Density Advantage (Doubling Power) 11:30 The Engineering Hurdles: Heat & Alignment 13:45 The Road to the Angstrom Era

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