CHARGE AHEAD: 1200V Gen 4 SiC FETs

Описание к видео CHARGE AHEAD: 1200V Gen 4 SiC FETs

The new 1200V Gen 4 SiC FETs range from 23mΩ to 70mΩ and deliver industry-best figures of merit, making them ideal for 800V bus architectures. Watch the video to learn about this new series of devices and visit www.unitedsic.com/gen4 to get started on your next high performance power design.

Explore the Gen 4 1200V SiC FETs: https://bit.ly/3nkt7zC
Use the FET-Jet Calculator to find your ideal device: https://bit.ly/3r6FeBo

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