Скачать или смотреть ZXMN6A25GTA-VB an N-channel SOT223 package MOS tube

Model: ZXMN6A25GTA-VB
Silk screen: VBJ1638
Brand: VBsemi
parameter:
Type: N-channel
Rated voltage (Vds): 60V
Maximum continuous current (Id): 7A
On-resistance (RDS(ON)): 24mΩ @ 10V, 27mΩ @ 4.5V
Gate-source voltage range (Vgs): 20V (positive and negative)
Threshold voltage range (Vth): 1-3V
-Package: SOT223

Application introduction:
The ZXMN6A25GTA-VB is an N-channel field effect transistor (MOSFET) with a high voltage rating and moderate current handling capabilities. It is suitable for a variety of low-power electronic applications requiring efficient energy consumption, low on-resistance and low gate-source voltage operation.

Detailed parameter description:
1. **Type**: This is an N-channel MOSFET, meaning it conducts when a positive voltage is input. This type of MOSFET is commonly used in switching and regulating circuits.

2. **Rated Voltage (Vds)**: The maximum drain-source voltage it can withstand is 60V. This means that under normal operating conditions, its voltage should not exceed 60V.

3. **Maximum continuous current (Id)**: The maximum current capability of this MOSFET is 7A. Although not very high, it is still sufficient in low power applications.

4. **On-resistance (RDS(ON))**: RDS(ON) is the resistance in the on-state, which affects the power consumption and efficiency of MOSFET. At a gate-to-source voltage of 10V, its RDS(ON) is 24mΩ, and at 4.5V it is 27mΩ. Low on-resistance means it can produce less power dissipation in the on-state.

5. **Gate-source voltage range (Vgs)**: The gate-source voltage range of MOSFET is 20V, which means that a voltage of at least 20V is required to control its conduction state.

6. **Threshold voltage range (Vth)**: The threshold voltage range of this MOSFET is 1-3V. This is the gate-source voltage range that initiates conduction of the MOSFET.

7. **Package**: This MOSFET comes in SOT223 package, which is a small package suitable for small circuit boards and space-constrained applications.

Application areas:
ZXMN6A25GTA-VB MOSFET is suitable for a variety of low-power electronic applications, including but not limited to the following fields:

1. **Mobile Devices**: Power management and battery protection circuits that can be used in mobile phones, tablets, and portable electronic devices.

2. **Power Switch**: Can be used in switch mode power supplies for voltage conversion and stabilization.

3. **LED driver**: used for current control and dimming control of LED lighting systems.

4. **Low Power Electronics**: Can be used in embedded systems, microcontrollers and sensor interfaces to reduce power consumption and increase efficiency.

5. **Battery Charging and Discharging**: Used for battery charging and discharging management circuit to ensure safe and efficient battery use.

In summary, this MOSFET is suitable for low-power electronic modules and devices that require efficient energy consumption, low on-resistance and low gate-source voltage operation.