An introduction to FD-SOI

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This video is an introduction to FD-SOI (Fully Depleted Silicon On Insulator), and especially UTBB (Ultra-Thin Body and Buried oxide) produced by STMicroelectronics. FD-SOI is a breakthrough semiconductor process technology that delivers the benefits of reduced silicon geometries while enabling a simplification of the manufacturing process. Semiconductor devices based on FD-SOI run faster and cooler than those in bulk silicon.

Unlike some other technologies, FD-SOI does not change the fundamental geometry of the transistor. In FD-SOI, the innovation lies in adding a thin layer of insulator, called the buried oxide, positioned just below the channel—the UTBB. This buried oxide layer eliminates the need to add dopants to the channel, thus making it "fully depleted."

The video explains some of the challenges of transistor design and how FD-SOI meets these challenges in a simple and cost-effective way today.