Three-Phase Integrated GaN IPM Enables Quiet operation, Very Low Dead Time

Описание к видео Three-Phase Integrated GaN IPM Enables Quiet operation, Very Low Dead Time

‪@TexasInstruments‬' Dung Dang explains the company’s DRV7308 three-phase intelligent power module (IPM). The IPM leverages a 205mΩ, 650V e-mode Gallium-Nitride (GaN) device to drive three-phase BLDC/PMSM motors with up to 450V DC rails.

Targeting field-oriented control, sinusoidal current control, and trapezoidal (six step) current control of BLDC motors, the device helps achieve more than 99% efficiency for a 3-phase modulated, FOC-driven, 250W motor drive application.

Комментарии

Информация по комментариям в разработке