Next Generation Nanosheet GAA Transistor

As Gordon Moore has predicted in 1965, the number of transistors in a integrated circuit (IC) has been doubled about every two years. It has been a challenge for semiconductor industry in the past few decades to keep developing the new technology to achieve a smaller transistor size. Transistors are start off with a few centimeters’ length but nowadays the transistor size has been shrunken to nm length. The size shrinking has been made possible due to the novel innovated technology.
So, this presentation will be focus on the next generation gate all around (GAA) transistor. To see the improvement of GAA transistor, the concept and the performance FinFET transistor is going to present first. Afterward, the concept and the performance of GAA FET to show why it has become the next generation transistor compared to the currently used finFET.